Etching behavior of PbTe and Pb1 − xSnxTe crystal surfaces in aqueous H2O2-HBr-tartaric acid solutions

被引：0
|
作者：
G. P. Malanych
V. N. Tomashyk
I. B. Stratiychuk
Z. F. Tomashyk
机构：
[1] National Academy of Sciences of Ukraine,Lashkaryov Institute of Semiconductor Physics
来源：
Inorganic Materials | 2014年 / 50卷
关键词：
Dissolution Rate; Tartaric Acid; PbTe; Etch Rate; Hydrobromic Acid;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The chemical polishing of the surface of single crystals of PbTe and Pb1 − xSnxTe solid solutions by H2O2-HBr-tartaric acid bromine-releasing etchants has been studied for the first time under reproducible hydrodynamic conditions. The dissolution rate of the crystals has been determined as a function of etchant composition, solution stirring rate, and temperature. The polished surfaces have been examined by microstructural analysis and electron microscopy. We have located the composition boundaries of solutions for the dynamic chemical polishing of the semiconductor materials studied.
引用
收藏
页码：661 / 666
页数：5
相关论文
共 50 条
  • [21] Chemical Etching of InAs, InSb, and GaAs in H2O2–HBr Solutions
    Z. F. Tomashik
    N. V. Kusyak
    V. N. Tomashik
    Inorganic Materials, 2002, 38 : 434 - 437
  • [22] Atomic force microscopy and Raman spectroscopy of Pb1-xSnxTe surfaces polished after treatment with H2O2-HBr-ethylene glycol etchants
    Malanych, G. P.
    Kolomys, O. F.
    Korchovyi, A. A.
    Safriuk, N. V.
    Tomashyk, V. M.
    APPLIED NANOSCIENCE, 2020, 10 (08) : 2717 - 2722
  • [23] Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid
    P. Moravec
    V.G. Ivanits’ka
    J. Franc
    Z.F. Tomashik
    V.M. Tomashik
    K. Mašek
    P.I. Feychuk
    L.P. Shcherbak
    P. Höschl
    R. Grill
    J. Walter
    Journal of Electronic Materials, 2009, 38 : 1645 - 1651
  • [24] Chemical etching of InAs, InSb, and GaAs in H2O2-HBr solutions
    Tomashik, ZF
    Kusyak, NV
    Tomashik, VN
    INORGANIC MATERIALS, 2002, 38 (05) : 434 - 437
  • [25] Chemical Interaction of CdTe and CdZnTe with Aqueous Solutions of H2O2-HI-Tartaric Acid
    Moravec, P.
    Ivanits'ka, V. G.
    Franc, J.
    Tomashik, Z. F.
    Tomashik, V. M.
    Masek, K.
    Feychuk, P. I.
    Shcherbak, L. P.
    Hoschl, P.
    Grill, R.
    Walter, J.
    JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (08) : 1645 - 1651
  • [26] Etching behavior of CdTe, CdTeaOE©Ge⟩, CdTeaOE©Sn⟩, and CdTeaOE©Pb⟩ single crystals in aqueous (NH4)2Cr2O7-HBr-citric acid solutions
    Tomashik, Z. F.
    Chukhnenko, P. S.
    Ivanits'ka, V. G.
    Tomashik, V. N.
    Okrepka, G. M.
    Stratiichuk, I. B.
    INORGANIC MATERIALS, 2012, 48 (02) : 114 - 118
  • [27] Etching behavior of CdTe, CdTe〈Ge〉, CdTe〈Sn〉, and CdTe〈Pb〉 single crystals in aqueous (NH4)2Cr2O7-HBr-citric acid solutions
    Z. F. Tomashik
    P. S. Chukhnenko
    V. G. Ivanits’ka
    V. N. Tomashik
    G. M. Okrepka
    I. B. Stratiichuk
    Inorganic Materials, 2012, 48 : 114 - 118
  • [28] Chemical Etching of CdTe in Aqueous Solutions of H2O2-HI-Citric Acid
    V. G. Ivanits’ka
    P. Moravec
    J. Franc
    Z. F. Tomashik
    P. I. Feychuk
    V. M. Tomashik
    L. P. Shcherbak
    K. Mašek
    P. Höschl
    Journal of Electronic Materials, 2007, 36 : 1021 - 1024
  • [29] Chemical etching of CdTe in aqueous solutions of H2O2-HI-citric acid
    Ivanits'ka, V. G.
    Moravec, P.
    Franc, J.
    Tomashik, Z. F.
    Feychuk, P. I.
    Tomashik, V. M.
    Shcherbak, L. P.
    Masek, K.
    Hoeschl, P.
    JOURNAL OF ELECTRONIC MATERIALS, 2007, 36 (08) : 1021 - 1024
  • [30] Use of H2O2-HBr-lactic acid etchants for chemical dissolution of PbTe and Pb1-x Sn x Te crystals
    Malanych, G. P.
    Tomashyk, V. N.
    Stratiychuk, I. B.
    Tomashyk, Z. F.
    RUSSIAN JOURNAL OF INORGANIC CHEMISTRY, 2015, 60 (09) : 1143 - 1147
12345