Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

被引：0
|
作者：
T. R. Lenka
A. K. Panda
机构：
[1] National Institute of Science & Technology,
来源：
Semiconductors | 2011年 / 45卷
关键词：
Gate Voltage; Drain Current; High Electron Mobility Transistor; 2DEG Density; Microwave Characteristic;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h21 = 1) cut-off frequency (ft), high power-gain frequency (fmax). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.
引用
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页码：1211 / 1218
页数：7
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