Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al,In)N/GaN-based HEMT

被引：0
|
作者：
T. R. Lenka
A. K. Panda
机构：
[1] National Institute of Science & Technology,
来源：
Semiconductors | 2011年 / 45卷
关键词：
Gate Voltage; Drain Current; High Electron Mobility Transistor; 2DEG Density; Microwave Characteristic;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A new AlGaN/GaN-based high electron mobility transistor (HEMT) is proposed and its micro-wave characteristics are discussed by introducing a nanoscale AlN or InN layer to study the potential improvement in their high frequency performance. The 2DEG transport mechanism including various sub-band calculations for both (Al,In) N-based HEMTs are also discussed in the paper. Apart from direct current characteristics of the proposed HEMT, various microwave parameters such as transconductance, unit current gain (h21 = 1) cut-off frequency (ft), high power-gain frequency (fmax). Masons available/stable gain and masons unilateral gain are also discussed for both devices to understand its suitable deployment in microwave frequency range.
引用
收藏
页码：1211 / 1218
页数：7
相关论文
共 50 条
  • [21] Physics-Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT
    Rastogi, Gunjan
    Kaneriya, R. K.
    Sinha, Santanu
    Upadhyay, R. B.
    Bhattacharya, A. N.
    RADIO SCIENCE, 2019, 54 (10) : 904 - 909
  • [22] Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond
    Gerrer, Thomas
    Pomeroy, James
    Yang, Feiyuan
    Francis, Daniel
    Carroll, Jim
    Loran, Brian
    Witkowski, Larry
    Yarborough, Marty
    Uren, Michael J.
    Kuball, Martin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (04) : 1530 - 1536
  • [23] MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3
    Lutsenko, E. V.
    Rzheutski, M. V.
    Vainilovich, A. G.
    Svitsiankou, I. E.
    Shulenkova, V. A.
    Muravitskaya, E. V.
    Alexeev, A. N.
    Petrov, S. I.
    Yablonskii, G. P.
    SEMICONDUCTORS, 2018, 52 (16) : 2107 - 2110
  • [24] MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3
    E. V. Lutsenko
    M. V. Rzheutski
    A. G. Vainilovich
    I. E. Svitsiankou
    V. A. Shulenkova
    E. V. Muravitskaya
    A. N. Alexeev
    S. I. Petrov
    G. P. Yablonskii
    Semiconductors, 2018, 52 : 2107 - 2110
  • [25] Realization of Improved Transconductance and Capacitance Characteristics in Al0.3Ga0.7N/AlN/GaN HEMT
    Panda, J.
    Swain, R.
    Rao, G. S.
    Lenka, T. R.
    2015 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, SIGNALS, COMMUNICATION AND OPTIMIZATION (EESCO), 2015,
  • [26] Analysis of breakdown characteristics of GaN-based HEMT by subdividing current components
    Wang, Xiao
    Lin, Zhiyu
    Zhang, Yumin
    Wang, Jianfeng
    Xu, Ke
    PHYSICA SCRIPTA, 2025, 100 (04)
  • [27] 使用AlN/GaN超晶格势垒层生长高Al组分AlGaN/GaN HEMT结构
    丁国建
    郭丽伟
    邢志刚
    陈耀
    徐培强
    贾海强
    周均铭
    陈弘
    物理学报, 2010, 59 (08) : 5724 - 5729
  • [28] Investigation and reduction of RF loss induced by Al diffusion at the AlN/Si(111) interface in GaN-based HEMT buffer stacks
    Mauder, C.
    Hahn, H.
    Marx, M.
    Gao, Z.
    Oligschlaeger, R.
    Zweipfennig, T.
    Noculak, A.
    Negra, R.
    Kalisch, H.
    Vescan, A.
    Heuken, M.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (07)
  • [29] Enhancement of Sensing Performance of GaN-Based MOS-HEMT Biosensors by Graded AlGaN Barrier
    Liu, Yanli
    Liu, Yue
    Guo, Haiqiu
    Li, Yuan
    Ma, Yuzhen
    Shen, Hui
    Chen, Dunjun
    Hu, Xiaolin
    IEEE SENSORS JOURNAL, 2024, 24 (15) : 23470 - 23479
  • [30] Microwave performance of AlGaN/AlN/GaN -based single and coupled channels HFETs
    Ferreyra, R. A.
    Li, X.
    Zhang, F.
    Zhu, C.
    Izyumskaya, N.
    Kayis, C.
    Avrutin, V.
    Ozgur, U.
    Morkoc, H.
    GALLIUM NITRIDE MATERIALS AND DEVICES VIII, 2013, 8625
12345