Hall Effect in Doped Mott–Hubbard Insulator

被引：0
|
作者：
E. Z. Kuchinskii
N. A. Kuleeva
M. V. Sadovskii
D. I. Khomskii
机构：
[1] Institute for Electrophysics,
[2] Ural Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] II Physikalisches Institut,undefined
[5] Universität zu Koeln,undefined
来源：
Journal of Experimental and Theoretical Physics | 2023年 / 136卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：368 / 377
页数：9
相关论文
共 50 条
  • [31] Inhomogeneity in Doped Mott Insulator
    Dung-Hai Lee
    Journal of Low Temperature Physics, 2003, 131 : 181 - 192
  • [32] Inhomogeneity in doped Mott insulator
    Lee, DH
    JOURNAL OF LOW TEMPERATURE PHYSICS, 2003, 131 (3-4) : 181 - 192
  • [33] Particle-hole symmetry and the effect of disorder on the Mott-Hubbard insulator
    Denteneer, PJH
    Scalettar, RT
    Trivedi, N
    PHYSICAL REVIEW LETTERS, 2001, 87 (14) : 146401/1 - 146401/4
  • [34] SiC(0001): A surface Mott-Hubbard insulator
    Anisimov, VI
    Bedin, AE
    Korotin, MA
    Santoro, G
    Scandolo, S
    Tosatti, E
    PHYSICAL REVIEW B, 2000, 61 (03): : 1752 - 1755
  • [35] Band to Mott insulator transition in the ionic Hubbard model
    Brune, P
    Kampf, AP
    HIGH PERFORMANCE COMPUTING IN SCIENCE AND ENGINEERING 01, 2002, : 167 - 177
  • [36] Theory of slightly doped Mott insulator
    Nagaosa, N
    Lee, TK
    Ho, CM
    Tohyama, T
    Maekawa, S
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2003, 388 : 15 - 18
  • [37] The analytical description of a doped Mott insulator
    Liu, Yu-Liang
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2019, 33 (29):
  • [38] Localized excitations in the doped Mott insulator
    CNRS, Grenoble, France
    Solid State Commun, 7 (639-642):
  • [39] Magnetic incommensurability in a doped Mott insulator
    Weng, ZY
    Sheng, DN
    Ting, CS
    PHYSICAL REVIEW B, 1999, 59 (17): : 11367 - 11376
  • [40] Theory of the lightly doped Mott insulator
    Eder, R.
    Wrobel, P.
    Ohta, Y.
    PHYSICAL REVIEW B, 2010, 82 (15):
12345