Hall Effect in Doped Mott–Hubbard Insulator

被引：0

作者：

E. Z. Kuchinskii

N. A. Kuleeva

M. V. Sadovskii

D. I. Khomskii

机构：

[1] Institute for Electrophysics,

[2] Ural Branch,undefined

[3] Russian Academy of Sciences,undefined

[4] II Physikalisches Institut,undefined

[5] Universität zu Koeln,undefined

来源：

Journal of Experimental and Theoretical Physics | 2023年 / 136卷

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：368 / 377

页数：9

共 50 条

[21] Effect of a geometrical frustration in the doped Mott insulator
Koretsune, T
Ogata, M
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2003, 388 : 88 - 89
[22] HALL-COEFFICIENT OF THE DOPED MOTT INSULATOR - A SIGNATURE OF PARITY VIOLATION
IOFFE, LB
KALMEYER, V
WIEGMANN, PB
PHYSICAL REVIEW B, 1991, 43 (01): : 1219 - 1222
[23] Thermoelectric Power and Hall Effect in Correlated Metals and Doped Mott-Hubbard Insulators: DMFT Approximation
Kuchinskii, E. Z.
Kuleeva, N. A.
Sadovskii, M. V.
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2023, 137 (06) : 927 - 939
[24] Band insulator to Mott insulator transition in a bilayer Hubbard model
Kancharla, S. S.
Okamoto, S.
PHYSICAL REVIEW B, 2007, 75 (19)
[25] Mott-Hubbard insulator in infinite dimensions
Kalinowski, E
Gebhard, F
JOURNAL OF LOW TEMPERATURE PHYSICS, 2002, 126 (3-4) : 979 - 1007
[26] Self-consistent study of the impurity-doped Mott-Hubbard insulator
Basu, S
Singh, A
PHYSICAL REVIEW B, 1996, 53 (10): : 6406 - 6411
[27] Self-consistent study of the impurity-doped Mott-Hubbard insulator
Basu, S.
Singh, A.
Physical Review B: Condensed Matter, 53 (10):
[28] Electrical resistivity and the Hall effect in the doped Mott-Hubbard material with strong spin-charge coupling
Korovushkin, Maxim M.
PHYSICA SCRIPTA, 2023, 98 (12)
[29] Superconductivity in a doped Mott insulator
Lee, DH
PHYSICAL REVIEW LETTERS, 2000, 84 (12) : 2694 - 2697
[30] Magnetotransport in the doped Mott insulator
Lange, E
Kotliar, G
PHYSICAL REVIEW B, 1999, 59 (03): : 1800 - 1807

← 1 2 3 4 5 →