Hall Effect in Doped Mott–Hubbard Insulator

被引：0
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作者：
E. Z. Kuchinskii
N. A. Kuleeva
M. V. Sadovskii
D. I. Khomskii
机构：
[1] Institute for Electrophysics,
[2] Ural Branch,undefined
[3] Russian Academy of Sciences,undefined
[4] II Physikalisches Institut,undefined
[5] Universität zu Koeln,undefined
来源：
Journal of Experimental and Theoretical Physics | 2023年 / 136卷
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页码：368 / 377
页数：9
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