Memory effect in Ba0.85Sr0.15TiO3 ferroelectric films on silicon substrates

被引：0
|
作者：
É. N. Myasnikov
S. V. Tolstousov
K. Yu. Frolenkov
机构：
[1] Rostov State Pedagogical University,
[2] Orel State Technical University,undefined
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Silicon; Microscopy; Electron Microscopy; Perovskite; Microscopy Study;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ba0.85Sr0.15TiO3 ferroelectric films on single-crystal silicon wafers were grown and studied. X-ray diffraction and electron microscopy studies showed that the films are characterized by a limited texture with a perovskite structure. It was shown that the grown films can be used as recording media for nonvolatile rerecorded data carriers in kinematic-type external memory devices. A possible mechanism of data recording and storage in the structures was considered.
引用
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页码：2268 / 2274
页数：6
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