Memory effect in Ba0.85Sr0.15TiO3 ferroelectric films on silicon substrates

被引：0
|
作者：
É. N. Myasnikov
S. V. Tolstousov
K. Yu. Frolenkov
机构：
[1] Rostov State Pedagogical University,
[2] Orel State Technical University,undefined
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Silicon; Microscopy; Electron Microscopy; Perovskite; Microscopy Study;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Ba0.85Sr0.15TiO3 ferroelectric films on single-crystal silicon wafers were grown and studied. X-ray diffraction and electron microscopy studies showed that the films are characterized by a limited texture with a perovskite structure. It was shown that the grown films can be used as recording media for nonvolatile rerecorded data carriers in kinematic-type external memory devices. A possible mechanism of data recording and storage in the structures was considered.
引用
收藏
页码：2268 / 2274
页数：6
相关论文
共 50 条
  • [11] Preparation, phase transition diffuseness and ferroelectric fatigue behavior of Ba0.85Sr0.15TiO3 thin film for uncooled infrared focal plane arrays
    Liu, SB
    Liu, MD
    Zeng, Y
    Huang, YQ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 90 (1-2): : 149 - 153
  • [12] Crystallization behavior and ferroelectric properties of PbTiO3/Ba0.85Sr0.15TiO3/PbTiO3 sandwich thin film on Pt/Ti/SiO2/Si substrates
    Shaobo Liu
    Yanqiu Li
    Meidong Liu
    Journal of Electronic Materials, 2003, 32 : 1085 - 1089
  • [13] Effects of ferroelectric oxides of barium strontium titanate (Ba0.85Sr0.15TiO3) nanoparticles on Ruditapes decussatus assessed through chemical, physiological, and biochemical methods
    Zaoui, M.
    Sellami, B.
    Boufahja, F.
    Faloda, F.
    Nahdi, S.
    Alrezaki, A.
    Alwasel, S.
    Harrath, A. H.
    CHEMOSPHERE, 2021, 265
  • [14] High-performance screen-printed Au/Ba0.85Sr0.15TiO3/Pt capacitors for tunable devices
    Selmi, A.
    Khaldi, O.
    Mascot, M.
    Jomni, F.
    Carru, J-C
    JOURNAL OF ALLOYS AND COMPOUNDS, 2021, 878
  • [15] TRAPPED CHARGE IN FERROELECTRIC FILMS (Ba,Sr)TiO3 ON SILICON
    Grekov, A. A.
    Tolstousov, S. V.
    INTEGRATED FERROELECTRICS, 2009, 105 : 37 - 44
  • [16] Permittivity measurement of Ba0.5Sr0.5TiO3 ferroelectric thin films on multilayered silicon substrates
    Wang, ZY
    Liu, HS
    Liu, LT
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2006, 55 (01) : 350 - 356
  • [17] Enhanced magnetoresistance in ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films
    Murugavel, P
    Padhan, P
    Prellier, W
    APPLIED PHYSICS LETTERS, 2004, 85 (21) : 4992 - 4994
  • [18] Influence of molar ratio on dielectric, ferroelectric and magnetic properties of Co0.5Mg0.5Fe2O4/Ba0.85Sr0.15TiO3 composite ceramics
    Bai, Lang
    Gao, Rongli
    Zhang, Qingmei
    Xu, Zhiyi
    Wang, Zhenhua
    Fu, Chunlin
    Chen, Gang
    Deng, Xiaoling
    Cai, Wei
    PROCESSING AND APPLICATION OF CERAMICS, 2019, 13 (03) : 257 - 268
  • [19] Enhanced multiferroic properties of Co0.5Ni0.5Fe2O4/Ba0.85Sr0.15TiO3 composites based on particle size effect
    Gao, Rongli
    Zhang, Qingmei
    Xu, Zhiyi
    Wang, Zhenhua
    Fu, Chunlin
    Chen, Gang
    Deng, Xiaoling
    Luo, Xiaodong
    Qiu, Yang
    Cai, Wei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (11) : 10256 - 10273
  • [20] Enhanced multiferroic properties of Co0.5Ni0.5Fe2O4/Ba0.85Sr0.15TiO3 composites based on particle size effect
    Rongli Gao
    Qingmei Zhang
    Zhiyi Xu
    Zhenhua Wang
    Chunlin Fu
    Gang Chen
    Xiaoling Deng
    Xiaodong Luo
    Yang Qiu
    Wei Cai
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 10256 - 10273
12345