Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation

被引：0

作者：

K. Hayama

K. Takakura

H. Ohyama

J. M. Rafí

A. Mercha

E. Simoen

C. Claeys

机构：

[1] Kumamoto National College of Technology,E.E. Dept

[2] Institut de Microelectrònica de Barcelona (CNM-CSIC),undefined

[3] KU Leuven,undefined

来源：

Journal of Materials Science: Materials in Electronics | 2005年 / 16卷

关键词：

Valence Band; Electron Valence; Gate Voltage; Potential Analysis; Gate Length;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new method for body potential estimation of ultra thin gate oxide fully-depleted silicon-on-insulator MOSFETs in accumulation mode operation is presented. The impact of the back gate voltage, gate length and drain voltage on the body potential is investigated. The magnitude of the Electron Valence Band gate tunneling-induced 2nd peak of the transconductance, characteristic of these ultra thin gate oxide FD SOI MOSFETs, is analyzed in terms of body potential changes and front gate characteristics shifts. Finally, a decrease of the body potential for strong accumulation back gate biases is revealed and discussed.

引用

页码：459 / 462

页数：3

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