Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

被引:0
|
作者
Y. S. Ergashov
B. E. Umirzakov
机构
[1] Tashkent State Technical University,
来源
Technical Physics | 2018年 / 63卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1820 / 1823
页数:3
相关论文
共 50 条
  • [41] FORMATION OF EPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO (100)-SI AND (111)-SI
    BULLELIEUWMA, CWT
    HAKKENS, FJG
    VANOMMEN, AH
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 635 - 640
  • [42] PHYSICAL-PROPERTIES AND ELECTRICAL CHARACTERIZATION OF SI/COSI2/SI HETEROSTRUCTURES
    ROSENCHER, E
    DAVITAYA, FA
    BADOZ, PA
    DELAGE, S
    DANTERROCHES, C
    PFISTER, JC
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 305 - 306
  • [43] FORMATION OF EPITAXIAL SI/COSI2/SI STRUCTURES BY CO IMPLANTATION INTO (100)-SI AND (111)-SI
    BULLELIEUWMA, CWT
    HAKKENS, FJG
    VANOMMEN, AH
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 635 - 640
  • [44] EPITAXIAL-GROWTH OF COSI2 ON SI(100)
    HADERBACHE, L
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    THIN SOLID FILMS, 1990, 184 : 317 - 323
  • [45] The growth of CoSi2 using a Co Zr bilayer on different Si substrates
    Kim, D
    Jeon, H
    THIN SOLID FILMS, 1999, 346 (1-2) : 244 - 250
  • [46] Epitaxial growth of CoSi2 on Si wafer using Co/Ta bilayer
    Byun, Jeong Soo
    Kang, Sug Bong
    Kim, Hyeong Joon
    Kim, Cha Yeon
    Park, Kyo Ho
    Journal of Applied Physics, 1993, 74 (05):
  • [47] ON THE FORMATION OF EPITAXIAL COSI2 FROM THE REACTION OF SI WITH A CO/TI BILAYER
    ZHANG, SL
    CARDENAS, J
    DHEURLE, FM
    SVENSSON, BG
    PETERSSON, CS
    APPLIED PHYSICS LETTERS, 1995, 66 (01) : 58 - 60
  • [49] EPITAXIAL-GROWTH OF COSI2/SI STRUCTURES
    BULLELIEUWMA, CWT
    APPLIED SURFACE SCIENCE, 1993, 68 (01) : 1 - 18
  • [50] ATOMIC GEOMETRY AT THE COSI2/SI(111) INTERFACE
    SANTANIELLO, A
    DEPADOVA, P
    JIN, X
    CHANDESRIS, D
    ROSSI, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 1017 - 1021