Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers

被引：0

作者：

A. S. Saidov

A. Sh. Razzakov

D. V. Saparov

机构：

[1] Academy of Sciences of the Republic of Uzbekistan,Physical Engineering Institute “Solar Physics” Research and Production Corporation

来源：

Technical Physics Letters | 2002年 / 28卷

关键词：

Solid Solution; Liquid Phase; GaAs; Growth Condition; Temperature Interval;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Epitaxial layers of (Sn2)1−x(InSb)x solid solutions were grown from an indium-based solution melt confined between two horizontal GaAs substrates in a temperature interval from 325 to 200°C. Scanning microprobe and X-ray diffraction investigations of the GaAs-(Sn2)1−x(InSb)x heterostructures showed that crystallographic perfection of the epitaxial layers depends on the epitaxial growth conditions.

引用

页码：927 / 928

页数：1

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