High Aspect Ratio Machining of Nanocarbon Materials by Reactive Ion Etching

被引：0
|
作者：
Atsuko Sekiguchi
Don N. Futaba
Takeo Yamada
Kenji Hata
机构：
[1] National Institute of Advanced Industrial Science and Technology (AIST),CNT
来源：
MRS Advances | 2017年 / 2卷 / 1期
关键词：
D O I：
10.1557/adv.2017.93
中图分类号：
学科分类号：
摘要：
We demonstrate anisotropic, vertical deep etching of graphite and densely packed carbon nanotube (CNT) thick layer beyond the micrometer scale, which representing the first step toward nanocarbon bulk micromachining. This micromachining process is compatible with standard lithography and therefore allows the fabrication of graphite and CNT architectures with 1 μm lateral resolution and up to 10 μm scale depth.
引用
收藏
页码：9 / 14
页数：5
相关论文
共 50 条
  • [31] TRILEVEL REACTIVE ION ETCHING PROCESSES FOR FABRICATION OF 60-NM GERMANIUM STRUCTURES WITH HIGH-ASPECT-RATIO
    MATTHIES, T
    DAVID, C
    THIEME, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (05): : 1873 - 1878
  • [32] SiC Wafer Bonding and Deep Reactive Ion Etching Towards High-Aspect Ratio SiC MEMS Fabrication
    Luna, Lunet E.
    Hobart, Karl D.
    Tadjer, Marko J.
    Myers-Ward, Rachael L.
    Anderson, Travis J.
    Kub, Fritz J.
    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS 15, 2018, 86 (05): : 105 - 110
  • [33] High-aspect-ratio nanoporous membranes made by reactive ion etching and e-beam and interference lithography
    Divan, Ralu
    Makarova, Olga V.
    Skoog, Shelby
    Narayan, Roger
    Sumant, Anirudha V.
    Tang, Cha-Mei
    Moldovan, Nicolaie
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2014, 20 (10-11): : 1797 - 1802
  • [34] Sharp High-Aspect-Ratio AFM Tips Fabricated by a Combination of Deep Reactive Ion Etching and Focused Ion Beam Techniques
    Caballero, David
    Villanueva, Guillermo
    Antonio Plaza, Jose
    Mills, Christopher A.
    Samitier, Josep
    Errachid, Abdelhamid
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2010, 10 (01) : 497 - 501
  • [35] Advances in High-Aspect-Ratio Deep Reactive Ion Etching of 4H-Silicon Carbide Wafers
    Li, Ningxin
    Liu, Zhenming
    Lotfi, Ardalan
    Jiang, Xinyu
    Long, Emma
    Sahasrabudhe, Shubham S.
    Bolton, Chris
    Ashraf, Huma
    Ayazi, Farrokh
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2024, 33 (06) : 776 - 784
  • [36] Effects of deep reactive ion etching parameters on etching rate and surface morphology in extremely deep silicon etch process with high aspect ratio
    Xu, Tiantong
    Tao, Zhi
    Li, Hanqing
    Tan, Xiao
    Li, Haiwang
    ADVANCES IN MECHANICAL ENGINEERING, 2017, 9 (12)
  • [37] PREPARATION OF HIGH-ASPECT RATIO PERIODIC CORRUGATIONS BY PLASMA AND ION ETCHING
    SOMEKH, S
    CASEY, HC
    ILEGEMS, M
    APPLIED OPTICS, 1976, 15 (08) : 1905 - 1906
  • [38] Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching
    Lawrowski, Robert Damian
    Prommesberger, Christian
    Langer, Christoph
    Dams, Florian
    Schreiner, Rupert
    ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2014, 2014
  • [39] Ion and neutral transportation consideration in etching of thin Si3N4 in high aspect ratio structures for aspect ratio independent etching
    Bai, KH
    Chi, KK
    Kim, MC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1292 - 1296
  • [40] Thermally assisted ion beam etching of polytetrafluoroethylene a new technique for high aspect ratio etching of MEMS
    Berenschot, E
    Jansen, H
    Burger, GJ
    Gardeniers, H
    Elwenspoek, M
    NINTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS, IEEE PROCEEDINGS: AN INVESTIGATION OF MICRO STRUCTURES, SENSORS, ACTUATORS, MACHINES AND SYSTEMS, 1996, : 277 - 284
12345