Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors

被引：0
|
作者：
Yu. A. Chaplygin
E. A. Artamonova
A. Yu. Krasyukov
T. Yu. Krupkina
机构：
[1] State Institute of Electronic Engineering,
来源：
Semiconductors | 2008年 / 42卷
关键词：
85.30.De; 85.30.Tv; 84.30.Jc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor.
引用
收藏
页码：1522 / 1526
页数：4
相关论文
共 50 条
  • [41] Self-heating effect in SOI MOSFET's
    Sun, ZM
    Liu, LT
    Li, ZJ
    1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 572 - 574
  • [42] On "pure self-heating effect" of MOSFET in SOI
    Zheng, TL
    Luo, JS
    Zhang, X
    SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 665 - 668
  • [43] Evaluation of self-heating effects on an innovative SOI technology ("Venezia" process)
    Villani, R
    Favilla, S
    Labate, L
    Novarini, E
    Ponza, A
    Stella, R
    PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2005, : 63 - 66
  • [44] Study of self-heating effects in GaNHEMTs
    Nuttinck, S
    Gebara, E
    Laskar, J
    Harris, M
    2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 2151 - 2154
  • [45] Modeling Self-Heating Effects in Nanometer SOI Devices at Cryogenic Temperatures
    Mendez-V, J.
    Vasileska, D.
    Raleva, K.
    Gutierrez, E. A.
    2022 IEEE LATIN AMERICAN ELECTRON DEVICES CONFERENCE (LAEDC), 2022,
  • [46] Electrothermal Simulation of Self-Heating in DMOS Transistors up to Thermal Runaway
    Pfost, Martin
    Boianceanu, Cristian
    Lohmeyer, Henning
    Stecher, Matthias
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (02) : 699 - 707
  • [47] Effects of self-heating and thermal-coupling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
    Liou, JJ
    Huang, CI
    1996 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1996, : 45 - 48
  • [48] Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics
    Kim, JY
    Park, SW
    Jung, MC
    Kim, CH
    Sung, MY
    Rhie, DH
    Kang, EG
    Kim, NG
    Kim, SC
    MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) : 1479 - 1483
  • [49] Self-Heating Effects on the Thermal Noise of Deep Sub-Micron FD-SOI MOSFETs
    Baltaci, Can
    Leblebici, Yusuf
    2017 13TH CONFERENCE ON PH.D. RESEARCH IN MICROELECTRONICS AND ELECTRONICS (PRIME), 2017, : 229 - 232
  • [50] Investigation of Self-Heating Effects in UTBB FD-SOI MOSFETs by a Modified Thermal Conductivity Model
    Xing, Qian
    Su, Yali
    Lai, Junhua
    Li, Bo
    Li, Binghong
    Bu, Jianhui
    Zhang, Guohe
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (08) : 4129 - 4137
12345