Study of thermal effects and self-heating phenomena in planar power SOI MOS transistors

被引：0

作者：

Yu. A. Chaplygin

E. A. Artamonova

A. Yu. Krasyukov

T. Yu. Krupkina

机构：

[1] State Institute of Electronic Engineering,

来源：

Semiconductors | 2008年 / 42卷

关键词：

85.30.De; 85.30.Tv; 84.30.Jc;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Heat removal problems, thermal effects, and self-heating phenomena occurring during operation of planar power SOI MOS transistors are considered. Using device-technological simulating methods, the transistor characteristics and safe operation range were studied. It was shown that limitations of the safe operation range are mostly associated with structure self-heating rather than with the parasitic bipolar transistor.

引用

页码：1522 / 1526

页数：4

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