Observation of e2/h Conductance Steps in a Side-Gate Point Contact on In0.75Ga0.25As/In0.75Al0.25As Heterostructure

被引：0

作者：

T. Kita

S. Gozu

Y. Sato

S. Yamada

机构：

[1] Center for Nano Materials and Technology,

[2] JAIST,undefined

[3] 1-1 Asahidai,undefined

[4] Tatsunokuchi,undefined

[5] CREST Japan Science and Technology,undefined

[6] Kawaguchi,undefined

来源：

Journal of Superconductivity | 2003年 / 16卷

关键词：

Quasi-1DEG; spin splitting; e; /h conductance; split-gates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett.77, 135 (1996)) that 0.7(2e2/h) conductance structure in Quasi-1DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In0.75Ga0.25As/In0.75Al0.25As heterojunctions grown on GaAs substrates and obtained the value of ≲10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys.89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e2/h conductance steps in low electron concentration side-gate point contact.

引用

页码：327 / 329

页数：2

共 30 条

[21] Magnetotransport in high-g-factor low-density two-dimensional electron systems confined in In0.75Ga0.25As/In0.75Al0.25As quantum wells -: art. no. 245324
Desrat, W
Giazotto, F
Pellegrini, V
Beltram, F
Capotondi, F
Biasiol, G
Sorba, L
Maude, DK
PHYSICAL REVIEW B, 2004, 69 (24) : 245324 - 1
[22] High-breakdown voltage Al0.66In0.34As0.85Sb0.15/In0.75Ga0.25As/InP heterostructure field-effect transistors
Su, JS
Hsu, WC
Lin, DT
Lin, W
Shiao, HP
Lin, YS
Huang, JZ
Chou, PJ
ELECTRONICS LETTERS, 1996, 32 (22) : 2095 - 2097
[23] Fabrication Technology and Device Performances of Ultra-Short 30-nm-Gate Pseudomorphic In0.52Al0.48As/In0.75Ga0.25As HEMTs
Wichmann, N.
Shchepetov, A.
Duszynski, I.
Roelens, Y.
Wallart, X.
Dambrine, G.
Cappy, A.
Bollaert, S.
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 71 - 74
[24] A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted δ-doped heterostructure field-effect transistor
Lee, CS
Hsu, WC
Shieh, HM
Su, JS
Jain, SY
Lin, W
SOLID-STATE ELECTRONICS, 2000, 44 (09) : 1635 - 1640
[25] Simulation of ultrasubmicrometer-gate In0.52Al0.48As/In0.75Ga0.25As/In0.52Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator
Ayubi-Moak, Jason S.
Ferry, David K.
Goodnick, Stephen M.
Akis, Richard
Saraniti, Marco
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2327 - 2338
[26] Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors
Wang, W.
Deng, J.
Hwang, J. C. M.
Xuan, Y.
Wu, Y.
Ye, P. D.
APPLIED PHYSICS LETTERS, 2010, 96 (07)
[27] High transconductance of 2.25 S/mm observed at 16 K for 195-nm-gate In0.75Ga0.25As/In0.52Al0.48As HEMT fabricated on (411)A-oriented InP substrate
Watanabe, I
Shinohara, K
Kitada, T
Shimomura, S
Yamashita, Y
Endoh, A
Mimura, T
Matsui, T
Hiyamizu, S
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 425 - 428
[28] Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect-transistors using UHV-Al2O3/Ga2O3(Gd2O3) and ALD-Al2O3 as gate dielectrics
Lin, T. D.
Chiu, H. C.
Chang, P.
Chang, Y. H.
Wu, Y. D.
Hong, M.
Kwo, J.
SOLID-STATE ELECTRONICS, 2010, 54 (09) : 919 - 924
[29] Achieving very high drain current of 1.23 mA/μm in a 1-μm-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
Lin, T. D.
Chang, P.
Wu, Y. D.
Chiu, H. C.
Kwo, J.
Hong, M.
JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 518 - 521
[30] Modifications of the three-dimensional transport properties of Si-doped Al0.25Ga0.75As exposed to CH4/H-2 reactive ion etching
Pereira, RG
VanHove, M
VanRossum, M
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 106 - 111

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