Observation of e2/h Conductance Steps in a Side-Gate Point Contact on In0.75Ga0.25As/In0.75Al0.25As Heterostructure

被引：0
|
作者：
T. Kita
S. Gozu
Y. Sato
S. Yamada
机构：
[1] Center for Nano Materials and Technology,
[2] JAIST,undefined
[3] 1-1 Asahidai,undefined
[4] Tatsunokuchi,undefined
[5] CREST Japan Science and Technology,undefined
[6] Kawaguchi,undefined
来源：
Journal of Superconductivity | 2003年 / 16卷
关键词：
Quasi-1DEG; spin splitting; e; /h conductance; split-gates;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In 1996, it was suggested by K. J. Thomas et al. (Phys. Rev. Lett.77, 135 (1996)) that 0.7(2e2/h) conductance structure in Quasi-1DEG (Q1DEG) at GaAs/AlGaAs heterostructure might be related to spin polarization at zero magnetic field. We have recently studied spontaneous spin-splitting in the 2DEGs formed at normal metamorphic In0.75Ga0.25As/In0.75Al0.25As heterojunctions grown on GaAs substrates and obtained the value of ≲10 meV as the zero-field splitting at Fermi level (Y. Sato et al., J. Appl. Phys.89, 8017 (2001)). In this work, we attempted to observe spin-related phenomena in this heterojunction Q1DEGs at zero magnetic field. We observed e2/h conductance steps in low electron concentration side-gate point contact.
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页码：327 / 329
页数：2
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