Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

被引：0
|
作者：
D. R. Islamov
A. G. Chernikova
M. G. Kozodaev
A. M. Markeev
T. V. Perevalov
V. A. Gritsenko
O. M. Orlov
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
[3] Moscow Institute of Physics and Technology,undefined
[4] Research Institute of Molecular Electronics,undefined
来源：
JETP Letters | 2015年 / 102卷
关键词：
Oxygen Vacancy; JETP Letter; Atomic Layer Deposition; Voltage Characteristic; Rutherford Backscattering Spectroscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The charge transport mechanism in thin amorphous and ferroelectric Hf0.5Zr0.5O2 films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current–voltage characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones provides the trap parameters: thermal energy of 1.25 eV and the optical energy of 2.5 eV. The trap concentration has been estimated as ~1019–1020 cm–3.
引用
收藏
页码：544 / 547
页数：3
相关论文
共 50 条
  • [41] Ferroelectric Hf0.5Zr0.5O2 films on SrTiO3(111)
    Song, Tingfeng
    Estandia, Saul
    Dix, Nico
    Gazquez, Jaume
    Gich, Marti
    Fina, Ignasi
    Sanchez, Florencio
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (21) : 8407 - 8413
  • [42] Highly Stable Epitaxially Crystallized Ferroelectric Hf0.5Zr0.5O2 Films
    Lyu, Xueliang
    Song, Tingfeng
    Quintana, Alberto
    Fina, Ignasi
    Sanchez, Florencio
    ACS APPLIED ELECTRONIC MATERIALS, 2023, 5 (11) : 6142 - 6148
  • [43] Study on the internal field and conduction mechanism of atomic layer deposited ferroelectric Hf0.5Zr0.5O2 thin films
    Park, M. H.
    Kim, H. J.
    Kim, Y. J.
    Moon, T.
    Kim, K. D.
    Lee, Y. H.
    Hyun, S. D.
    Hwang, C. S.
    JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (24) : 6291 - 6300
  • [44] Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility
    Chen, Yuting
    Yang, Yang
    Yuan, Peng
    Jiang, Pengfei
    Wang, Yuan
    Xu, Yannan
    Lv, Shuxian
    Ding, Yaxin
    Dang, Zhiwei
    Gao, Zhaomeng
    Gong, Tiancheng
    Wang, Yan
    Luo, Qing
    NANO RESEARCH, 2022, 15 (04) : 2913 - 2918
  • [45] Short-Range Order in Amorphous and Crystalline Ferroelectric Hf0.5Zr0.5O2
    S. B. Erenburg
    S. V. Trubina
    K. O. Kvashnina
    V. N. Kruchinin
    V. V. Gritsenko
    A. G. Chernikova
    A. M. Markeev
    Journal of Experimental and Theoretical Physics, 2018, 126 : 816 - 824
  • [46] Reliability improvement of ferroelectric Hf0.5Zr0.5O2 thin films by Lanthanum doping for FeRAM applications
    Mehmood, Furqan
    Mikolajick, Thomas
    Schroeder, Uwe
    2020 DEVICE RESEARCH CONFERENCE (DRC), 2020,
  • [47] Constructing a correlation between ferroelectricity and grain sizes in Hf0.5Zr0.5O2 ferroelectric thin films
    Chen, Haiyan
    Luo, Hang
    Yuan, Xi
    Zhang, Dou
    CRYSTENGCOMM, 2022, 24 (09) : 1731 - 1737
  • [48] Nucleation-Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
    Lee, Young Hwan
    Hyun, Seung Dam
    Kim, Hoe Jin
    Kim, Jun Shik
    Yoo, Chanyoung
    Moon, Taehwan
    Kim, Keum Do
    Park, Hyeon Woo
    Lee, Yong Bin
    Kim, Baek Su
    Roh, Jangho
    Park, Min Hyuk
    Hwang, Cheol Seong
    ADVANCED ELECTRONIC MATERIALS, 2019, 5 (02):
  • [49] Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility
    Yuting Chen
    Yang Yang
    Peng Yuan
    Pengfei Jiang
    Yuan Wang
    Yannan Xu
    Shuxian Lv
    Yaxin Ding
    Zhiwei Dang
    Zhaomeng Gao
    Tiancheng Gong
    Yan Wang
    Qing Luo
    Nano Research, 2022, 15 : 2913 - 2918
  • [50] Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films
    Oh, Changyong
    Tewari, Amit
    Kim, Kyungkwan
    Kumar, Ulayil Sajesh
    Shin, Changhwan
    Ahn, Minho
    Jeon, Sanghun
    NANOTECHNOLOGY, 2019, 30 (50)
12345