Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

被引：0
|
作者：
D. R. Islamov
A. G. Chernikova
M. G. Kozodaev
A. M. Markeev
T. V. Perevalov
V. A. Gritsenko
O. M. Orlov
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
[3] Moscow Institute of Physics and Technology,undefined
[4] Research Institute of Molecular Electronics,undefined
来源：
JETP Letters | 2015年 / 102卷
关键词：
Oxygen Vacancy; JETP Letter; Atomic Layer Deposition; Voltage Characteristic; Rutherford Backscattering Spectroscopy;
D O I：
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中图分类号：
学科分类号：
摘要：
The charge transport mechanism in thin amorphous and ferroelectric Hf0.5Zr0.5O2 films has been studied. It has been shown that the transport mechanism in studied materials does not depend on the crystal phase and is phonon-assisted tunneling between traps. The comparison of the experimental current–voltage characteristics of TiN/Hf0.5Zr0.5O2/Pt structures with the calculated ones provides the trap parameters: thermal energy of 1.25 eV and the optical energy of 2.5 eV. The trap concentration has been estimated as ~1019–1020 cm–3.
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页码：544 / 547
页数：3
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