Pulsed laser annealing of self-organized InAs/GaAs quantum dots

被引：0
|
作者：
S. Chakrabarti
S. Fathpour
K. Moazzami
J. Phillips
Y. Lei
N. Browning
P. Bhattacharya
机构：
[1] University of Michigan,Department of Electrical Engineering and Computer Science
[2] University of Illinois,Department of Physics
[3] National Center for Electron Microscopy,MS 72–150 Lawrence Berkeley National Laboratory
来源：
Journal of Electronic Materials | 2004年 / 33卷
关键词：
Quantum dots; self-organized epitaxy; laser annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of pulsed laser annealing (PLA), using an excimer laser, on the luminescence efficiency of self-organized InAs/GaAs and In0.4Ga0.6As/GaAs quantum dots has been investigated. It is found that such annealing can enhance both the peak and integrated photoluminescence (PL) efficiency of the dots, up to a factor of 5–10 compared to as-grown samples, without any spectral shift of the luminescence spectrum. The improved luminescence is attributed to the annealing of nonradiative point and extended defects in and around the dots.
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页码：L5 / L8
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