Pulsed laser annealing of self-organized InAs/GaAs quantum dots

被引：0
|
作者：
S. Chakrabarti
S. Fathpour
K. Moazzami
J. Phillips
Y. Lei
N. Browning
P. Bhattacharya
机构：
[1] University of Michigan,Department of Electrical Engineering and Computer Science
[2] University of Illinois,Department of Physics
[3] National Center for Electron Microscopy,MS 72–150 Lawrence Berkeley National Laboratory
来源：
Journal of Electronic Materials | 2004年 / 33卷
关键词：
Quantum dots; self-organized epitaxy; laser annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of pulsed laser annealing (PLA), using an excimer laser, on the luminescence efficiency of self-organized InAs/GaAs and In0.4Ga0.6As/GaAs quantum dots has been investigated. It is found that such annealing can enhance both the peak and integrated photoluminescence (PL) efficiency of the dots, up to a factor of 5–10 compared to as-grown samples, without any spectral shift of the luminescence spectrum. The improved luminescence is attributed to the annealing of nonradiative point and extended defects in and around the dots.
引用
收藏
页码：L5 / L8
相关论文
共 50 条
  • [21] Photocurrent in self-organized InAs quantum dots in 1.3 μm InAs/InGaAs/GaAs semiconductor laser heterostructures
    Savel'evl, AV
    Maksimov, MV
    Ustinov, VM
    Seisyan, RP
    SEMICONDUCTORS, 2006, 40 (01) : 84 - 88
  • [22] Ripening of self-organized InAs quantum dots
    Pötschke, K
    Müller-Kirsch, L
    Heitz, R
    Sellin, RL
    Pohl, UW
    Bimberg, D
    Zakharov, N
    Werner, P
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 21 (2-4): : 606 - 610
  • [23] InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy
    Kiravittaya, S
    Songmuang, R
    Changmuang, P
    Sopitpan, S
    Ratanathammaphan, S
    Sawadsaringkarn, M
    Panyakeow, S
    JOURNAL OF CRYSTAL GROWTH, 2001, 227 : 1010 - 1015
  • [24] Photoconductivity in self-organized InAs quantum dots
    Natl Taiwan Univ, Taipei, Taiwan
    J Appl Phys, 9 (5351-5353):
  • [25] Photoconductivity in self-organized InAs quantum dots
    Fan, JC
    Lin, YJ
    Chen, YF
    Chen, MC
    Lin, HH
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) : 5351 - 5353
  • [26] Wavelength selective charge accumulation in self-organized InAs/GaAs quantum dots
    Warming, T
    Guffarth, F
    Heitz, R
    Kapteyn, C
    Brunkov, P
    Ustinov, VM
    Bimberg, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (04) : S51 - S53
  • [27] Temperature dependent optical properties of self-organized InAs GaAs quantum dots
    Heitz, R
    Mukhametzhanov, I
    Madhukar, A
    Hoffmann, A
    Bimberg, D
    JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (05) : 520 - 527
  • [28] STRAIN DISTRIBUTION AND ELECTRONIC STRUCTURE OF SELF-ORGANIZED InAs/GaAs QUANTUM DOTS
    Liu, Yumin
    Xu, Zihuan
    Yu, Zhongyuan
    Jia, Boyong
    Lu, Wenjuan
    Lu, Pengfei
    Han, Lihong
    JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2009, 18 (04) : 553 - 560
  • [29] 1.75 μm emission from self-organized InAs quantum dots on GaAs
    Ustinov, VM
    Egorov, AY
    Zhukov, AE
    Kovsh, AR
    Ledentsov, NN
    Maximov, MV
    Volovik, BV
    Tsatsul'nikov, AF
    Kop'ev, PS
    Alferov, ZI
    Soshnikov, IP
    Zakharov, N
    Werner, P
    Bimberg, D
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1143 - 1145
  • [30] Photovoltage and luminescence study of stacked InAs/GaAs self-organized quantum dots
    Jiang, DS
    Gong, Q
    Chen, YB
    Sun, BQ
    Liang, JB
    Wang, ZG
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 257 - 260
12345