Thiazole-Flanked Thiazoloisoindigo as a Monomer for Balanced Ambipolar Polymeric Field-effect Transistors

被引：0
|
作者：
Si-Yu Lv
Qi-Yi Li
Bo-Wen Li
Jie-Yu Wang
You-Bing Mu
Liang Li
Jian Pei
Xiao-Bo Wan
机构：
[1] Jianghan University,Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, School of Optoelectronic Materials & Technology
[2] Peking University,Beijing National Laboratory for Molecular Sciences, the Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, College of Chemistry and Molecular Engineering
[3] Wuhan Institute of Technology,School of Materials Science and Engineering
来源：
Chinese Journal of Polymer Science | 2022年 / 40卷
关键词：
Thiazoloisoindigo; Ambipolar; Polymeric field-effect transistors;
D O I：
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中图分类号：
学科分类号：
摘要：
Electron-rich thiophene-flanked thiazoloisoindigo (Th-TzII) has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole transport. Here, we report that by using an electron deficient thiazole as the flanked moiety, the corresponding thiazoloisoindigo (Tz-TzII) can still be synthesized, although in a more sinuous way. Theoretical calculation and experimental results demonstrate that Tz-TzII is more electron-deficient than Th-TzII, and the corresponding polymer P(TzII-Tz-T-Tz) exhibits high and balanced hole/electron mobility of 0.70/0.64 cm2·V−1·s−1.
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页码：1131 / 1140
页数：9
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