Thiazole-Flanked Thiazoloisoindigo as a Monomer for Balanced Ambipolar Polymeric Field-effect Transistors

Electron-rich thiophene-flanked thiazoloisoindigo (Th-TzII) has been reported as a building block for ambipolar polymeric field-effect transistors however with preferable hole transport. Here, we report that by using an electron deficient thiazole as the flanked moiety, the corresponding thiazoloisoindigo (Tz-TzII) can still be synthesized, although in a more sinuous way. Theoretical calculation and experimental results demonstrate that Tz-TzII is more electron-deficient than Th-TzII, and the corresponding polymer P(TzII-Tz-T-Tz) exhibits high and balanced hole/electron mobility of 0.70/0.64 cm2·V−1·s−1.