Recombination at mixed-valence impurity centers in PbTe(Ga) epitaxial layers

被引：0
|
作者：
B. A. Akimov
V. A. Bogoyavlenskii
V. A. Vasil’kov
L. I. Ryabova
D. R. Khokhlov
机构：
[1] Moscow State University,
来源：
Physics of the Solid State | 2005年 / 47卷
关键词：
Recombination; Film Thickness; Electrical Resistivity; Gallium; Charged State;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The photoconductivity kinetics in PbTe(Ga) epitaxial films prepared by the hot-wall method is studied. The recombination of nonequilibrium photoexcited electrons at low temperatures was found to proceed in two stages, with a period of relatively fast relaxation followed by delayed photoconductivity. The temperature at which delayed photoconductivity appears increases with decreasing film thickness. The relaxation rate over the period of fast relaxation depends on film thickness and is the lowest in the thinnest layers. In semi-insulating films, photoconductivity is always positive, whereas in samples with lower electrical resistivity positive and negative photoconductivities are observed to coexist. The data obtained are discussed in terms of a model in which the impurity gallium atom can be in more than one charged state.
引用
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页码：166 / 169
页数：3
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