Nonradiative carrier recombination centers of Cl-doped ZnSe epitaxial layers

被引：0
|
作者：
Yoshino, K
Mikami, H
Yoneta, M
Saito, H
Ohishi, M
Ikari, T
机构：
[1] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
[2] Okayama Univ Sci, Dept Appl Phys, Okayama 7000005, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2000年 / 180卷 / 01期
关键词：
D O I：
10.1002/1521-396X(200007)180:1<201::AID-PSSA201>3.0.CO;2-Q
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The photothermal and photoluminescence spectroscopy for nondoped and chlorine (Cl)-doped ZnSe epitaxial layers were carried out at liquid nitrogen and room temperatures. We found two kinds of nonradiative carrier recombination centers which are Cl-related defects with activation energies of about 30 and 120 meV for the first time.
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收藏
页码：201 / 205
页数：5
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