A new approach to integrate PLZT thin films with micro-cantilevers

被引:0
|
作者
Ravindra Singh
T. C. Goel
Sudhir Chandra
机构
[1] Indian Institute of Technology Delhi,Centre for Applied Research in Electronics
[2] BITS Pilani Goa Campus,undefined
来源
Sadhana | 2009年 / 34卷
关键词
PLZT thin films; pure perovskite phase; RF sputtering; lift-off process; micro-cantilevers;
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学科分类号
摘要
In the present work, we report the preparation of PLZT thin films in pure perovskite phase by RF magnetron sputtering without external substrate heating and their integration with micro-cantilevers. The ‘lift-off’ process for patterning different layers of a micro-cantilever including PLZT, Pt/Ti and Au/Cr was employed. The basic requirement of lift-off process is that the deposition temperature should not exceed 200°C otherwise photoresist will burn out. Therefore, one of the aims of the present work was to prepare PLZT film at lower deposition temperatures, which can be subsequently annealed to form pure perovskite phase. This also strongly favours the incorporation of ‘lift-off’ process for patterning in the complete process flow. As no external substrate heating was required in the deposition of PLZT film, this objective has been successfully accomplished in the present work. The ‘lift-off’ process has been successfully adopted for patterning the composite layers of PLZT/Pt/Ti and Au/Cr using thick positive photo-resist (STR-1045). Different types of cantilever beams incorporating PLZT films have been successfully fabricated using ‘lift-off’ process and bulk micromachining technology. The proposed process can be advantageously applied for the fabrication of various MEMS devices.
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页码:563 / 572
页数:9
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