Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

被引：0
|
作者：
V. Ya. Aleshkin
S. V. Morozov
V. V. Rumyantsev
I. V. Tuzov
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Lobachevsky State University,undefined
来源：
Semiconductors | 2015年 / 49卷
关键词：
GaAs; Optical Phonon; Acoustic Phonon; Electron Cool; Difference Frequency Generator;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.
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页码：113 / 117
页数：4
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