Observation of dynamics of impurity photoconductivity in n-GaAs caused by electron cooling

被引:0
|
作者
V. Ya. Aleshkin
S. V. Morozov
V. V. Rumyantsev
I. V. Tuzov
机构
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Lobachevsky State University,undefined
来源
Semiconductors | 2015年 / 49卷
关键词
GaAs; Optical Phonon; Acoustic Phonon; Electron Cool; Difference Frequency Generator;
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中图分类号
学科分类号
摘要
Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.
引用
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页码:113 / 117
页数:4
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