GaAs;
Optical Phonon;
Acoustic Phonon;
Electron Cool;
Difference Frequency Generator;
D O I:
暂无
中图分类号:
学科分类号:
摘要:
Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.