Simulation of the characteristics of the DICE 28-nm CMOS cells in unsteady states caused by the effect of single nuclear particles

Trigger transistors of the DICE CMOS memory cell can be divided into two groups and spaced topologically; and if the effect of single nuclear particle affects transistors of only one group, no upset of the cell state occurs, while the cell transforms into the unsteady state. If transistors of the second group are simultaneously affected, and this effect exceeds the threshold one, then the upset of the initial state occurs. If the effect on the second group is lower than the threshold one, then the cell returns to the initial steady state from an unsteady one. Characteristics of the DICE CMOS memory cell with a 28-nm design rule are simulated and analyzed for unsteady states caused by the influence of a single nuclear particle on transistors of only one or both groups of cell transistors. © 2015, Pleiades Publishing, Ltd.