Examining the role of tap cell in suppressing single event transient effect in 28-nm CMOS technology

被引：0
|
作者：
Zhang, Chenyu [1 ]
Li, Yan [1 ]
Zhan, Wenfa [2 ]
Geng, Wenping [3 ]
Liang, Ting [3 ]
Zeng, Xiaoyang [1 ]
机构：
[1] Fudan Univ, State Key Lab Integrated Chips & Syst, Shanghai 201203, Peoples R China
[2] Anqing Normal Univ, Anqing 246133, Peoples R China
[3] North Univ China, Taiyuan 030051, Peoples R China
来源：
MICROELECTRONICS JOURNAL | 2024年 / 143卷
基金：
中国国家自然科学基金;
关键词：
Well and substrate contact; Charge collection; Single-event transient; Parasitic bipolar effect; WELL CONTACTS; 130; NM; IMPACT;
D O I：
10.1016/j.mejo.2023.106055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Single Event Transient (SET) phenomenon, which occurs in combinational circuits, has emerged as the primary source of soft errors in Integrated Circuits (IC) in advanced deep-submicron technologies. Therefore, it is imperative to investigate the underlying mechanisms of SET effects in order to gain valuable insights for mitigating SET in combinational circuits. In advanced technologies, specifically those at the 28-nm and below, tap cells are commonly utilized as the well and substrate contact to achieve higher device density. This article presents a comprehensive study on the impact of tap cells on SET sensitivity for the first time. Furthermore, a comparison is made between the SET sensitivity of conventional and tap cell-based well and substrate contact.
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页数：7
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