Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

被引：0
|
作者：
Z. F. Krasilnik
K. E. Kudryavtsev
A. N. Kachemtsev
D. N. Lobanov
A. V. Novikov
S. V. Obolenskiy
D. V. Shengurov
机构：
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Sedakov Scientific-Research Institute,undefined
[3] Nizhni Novgorod State University,undefined
来源：
Semiconductors | 2011年 / 45卷
关键词：
Charge Carrier; Neutron Irradiation; Radiation Defect; Nonradiative Recombination; Equivalent Thickness;
D O I：
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中图分类号：
学科分类号：
摘要：
The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.
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页码：225 / 229
页数：4
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