Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

被引：0

作者：

Z. F. Krasilnik

K. E. Kudryavtsev

A. N. Kachemtsev

D. N. Lobanov

A. V. Novikov

S. V. Obolenskiy

D. V. Shengurov

机构：

[1] Russian Academy of Sciences,Institute for Physics of Microstructures

[2] Sedakov Scientific-Research Institute,undefined

[3] Nizhni Novgorod State University,undefined

来源：

Semiconductors | 2011年 / 45卷

关键词：

Charge Carrier; Neutron Irradiation; Radiation Defect; Nonradiative Recombination; Equivalent Thickness;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The effect of neutron radiation on the electroluminescence of the Si p-i-n diode containing a multilayered Ge/Si heterostructure with self-assembled nanoislands is studied. In comparison with bulk Si, the diodes containing Ge(Si) nanoislands exhibit a higher radiation hardness of the electroluminescence signal, which is attributed to spatial localization of charge carriers in the Ge/Si nanostructures. The spatial localization of charge carriers impedes their diffusion to radiation defects followed by nonradiative recombination at the defects. The results show the possibilities of using Ge/Si heterostructures with self-assembled nanoislands for the development of optoelectronic devices resistant to radiation.

引用

页码：225 / 229

页数：4

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