Specifics of electromagnetic radiation effects on integrated circuits

被引：1
|
作者：
Skorobogatov P.K. [1 ,2 ]
Gerasimchuk O.A. [3 ]
Epifantsev K.A. [1 ]
Telets V.A. [1 ]
机构：
[1] National Research Nuclear University MEPhI, Moscow
[2] Specialized Electronic Systems (SPELS), Moscow
[3] Impul’snaya tekhnika Research and Production Center, Dukhov All-Russia Research Institute of Automatics, Moscow
来源：
Skorobogatov, P.K. (pkskor@spels.ru) | 1600年 / Maik Nauka Publishing / Springer SBM卷 / 46期
关键词：
Timing circuits;
D O I：
10.1134/S1063739717030088
中图分类号：
学科分类号：
摘要：
Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry. © 2017, Pleiades Publishing, Ltd.
引用
收藏
页码：166 / 170
页数：4
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