PERMANENT RADIATION EFFECTS IN COMPLEMENTARY-SYMMETRY MOS INTEGRATED CIRCUITS

被引：7

|

作者：

POCH, W

HOLMESSI.AG

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1969年 / NS16卷 / 06期

关键词：

D O I：

10.1109/TNS.1969.4325531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：227 / +

页数：1

相关论文

共 50 条

[1] TRANSIENT RADIATION RESPONSE OF COMPLEMENTARY-SYMMETRY MOS INTEGRATED CIRCUITS
DENNEHY, WJ
HOLMESSI.AG
LEOPOLD, WF
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) : 114 - &
[2] SWITCHING RESPONSE OF COMPLEMENTARY-SYMMETRY MOS TRANSISTOR LOGIC CIRCUITS
BURNS, JR
RCA REVIEW, 1964, 25 (04): : 627 - 661
[3] HAS COMPLEMENTARY-SYMMETRY MOS LOGIC ARRIVED
BOSSO, A
ELECTRONIC PRODUCTS MAGAZINE, 1972, 14 (10): : 90 - &
[4] PERMANENT RADIATION EFFECTS IN HARDENED A1203 MOS INTEGRATED CIRCUITS
MICHELET.FB
ZAININGE.KH
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1970, NS17 (06) : 27 - +
[5] INTERACTION OF TECHNOLOGY AND PERFORMANCE IN COMPLEMENTARY SYMMETRY MOS INTEGRATED CIRCUITS
AHRONS, RW
GARDNER, PD
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1970, SC 5 (01) : 24 - &
[6] COMPLEMENTARY MOS INTEGRATED-CIRCUITS
JOHNSON, PA
WIRELESS WORLD, 1973, 79 (1454): : 395 - 400
[7] RELIABILITY OF COMPLEMENTARY MOS INTEGRATED-CIRCUITS
VINCOFF, MN
SCHNABLE, GL
IEEE TRANSACTIONS ON RELIABILITY, 1975, 24 (04) : 255 - 259
[8] TECHNOLOGY AND PERFORMANCE OF INTEGRATED COMPLEMENTARY MOS CIRCUITS
KLEIN, T
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (03) : 122 - &
[9] Complementary Pairs of MOS Transistors in Integrated Circuits.
Marciniak, Wieslaw
Iwanicka, Krystyna
Elektronika, 1973, 14 (08): : 352 - 358
[10] NUCLEAR RADIATION EFFECTS ON INTEGRATED-CIRCUITS (TTL, MOS, CMOS, SOS)
CHARLOT, JM
ONDE ELECTRIQUE, 1983, 63 (02): : 43 - 48

← 1 2 3 4 5 →