PERMANENT RADIATION EFFECTS IN COMPLEMENTARY-SYMMETRY MOS INTEGRATED CIRCUITS

被引:7
|
作者
POCH, W
HOLMESSI.AG
机构
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D O I
10.1109/TNS.1969.4325531
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:227 / +
页数:1
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