Atom probe tomography of phosphorus- and boron-doped silicon nanocrystals with various compositions of silicon rich oxide

被引：0

作者：

Keita Nomoto

Sebastian Gutsch

Anna V. Ceguerra

Andrew Breen

Hiroshi Sugimoto

Minoru Fujii

Ivan Perez-Wurfl

Simon P. Ringer

Gavin Conibeer

机构：

[1] The University of New South Wales,School of Photovoltaic and Renewable Energy Engineering

[2] IMTEK,Australian Centre for Microscopy & Microanalysis, and School of Aerospace, Mechanical and Mechatronic Engineering

[3] Albert-Ludwigs-University Freiburg,Department of Electrical and Electronic Engineering, Graduate School of Engineering

[4] The University of Sydney,School of Photovoltaic and Renewable Energy Engineering

[5] Kobe University,Australian Institute for Nanoscale Science and Technology, and School of Aerospace, Mechanical and Mechatronic Engineering

[6] Rokkodai,School of Photovoltaic and Renewable Energy Engineering

[7] The University of New South Wales,undefined

[8] The University of Sydney,undefined

[9] The University of New South Wales,undefined

来源：

MRS Communications | 2016年 / 6卷

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摘要：

We analyze phosphorus (P)- and boron (B)-doped silicon nanocrystals (Si NCs) with various compositions of silicon-rich oxide using atom probe tomography. By creating Si iso-concentration surfaces, it is confirmed that there are two types of Si NC networks depending on the amount of excess Si. A proximity histogram shows that P prefers to locate inside the Si NCs, whereas B is more likely to reside outside the Si NCs. We discuss the difference in a preferential location between P and B by a segregation coefficient.

引用

页码：283 / 288

页数：5

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