AFM probe tips using heavily boron-doped silicon cantilevers - Realized in a (110) bulk silicon wafer

被引:0
|
作者
Cho, IJ [1 ]
Park, EC [1 ]
Yoon, E [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
来源
MICROPROCESSES AND NANOTECHNOLOGY 2000, DIGEST OF PAPERS | 2000年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:230 / 231
页数:2
相关论文
共 50 条
  • [1] Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a (110) bulk silicon wafer
    Cho, IJ
    Park, EC
    Hong, S
    Yoon, E
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (12B): : 7103 - 7107
  • [2] Atomic force microscope probe tips using heavily boron-doped silicon cantilevers realized in a 〈110〉 bulk silicon wafer
    Cho, Il-Joo
    Park, Eun-Chul
    Hong, Songcheol
    Yoon, Euisik
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 2000, 39 (12): : 7103 - 7107
  • [3] DISLOCATIONS IN HEAVILY BORON-DOPED SILICON
    NING, XJ
    PIROUZ, P
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 205 - 210
  • [4] OXYGEN PRECIPITATION IN HEAVILY BORON-DOPED SILICON
    GUPTA, S
    MESSOLORAS, S
    SCHNEIDER, JR
    STEWART, RJ
    ZULEHNER, W
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1991, 24 (pt 5) : 576 - 580
  • [5] Diffusion of gold into heavily boron-doped silicon
    Bracht, H
    Schachtrup, AR
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 25 - 36
  • [6] Activation and deactivation in heavily boron-doped silicon
    Yoo, SH
    Ro, JS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (02) : 290 - 295
  • [7] Superconductivity in heavily boron-doped silicon carbide
    Kriener, Markus
    Muranaka, Takahiro
    Kato, Junya
    Ren, Zhi-An
    Akimitsu, Jun
    Maeno, Yoshiteru
    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2008, 9 (04)
  • [8] Anneal treatment studies of heavily boron-doped silicon
    Bruce, DM
    MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY III, 1997, 3223 : 270 - 275
  • [9] A Highly Sensitive Determination of Bulk Cu and Ni in Heavily Boron-doped Silicon Wafers
    Lee, Sung-wook
    Lee, Sang-hak
    Kim, Young-hoon
    Kim, Ja-young
    Hwang, Don-ha
    Lee, Bo-young
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 2011, 32 (07) : 2227 - 2232
  • [10] The investigation of boron-doped silicon using atom probe tomography
    Blavette, D.
    Cadel, E.
    Cojocaru-Miredin, O.
    Deconihout, B.
    PROCEEDINGS OF THE 11TH EUROPEAN WORKSHOP OF THE EUROPEAN-MICROBEAM-ANALYSIS-SOCIETY (EMAS) ON MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS, 2010, 7