Electronic structure of Ga1–xAlxAs nanostructures grown on the GaAs surface by ion implantation

被引：0
|
作者：
S. B. Donaev
B. E. Umirzakov
D. A. Tashmukhamedova
机构：
[1] Tashkent State Technical University,
来源：
Technical Physics | 2015年 / 60卷
关键词：
GaAs; Molecular Beam Epitaxy; GaAs Surface; Nanocrystalline Phase; GaAs Film;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The surface morphology and electronic properties of nanocrystalline phases and 2–7-nm-thick Ga1-xAlxAs films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap Eg of the Ga0.5Al0.5As nanocrystalline surface phase 25–30 nm in size equals 2.8–2.9 eV.
引用
收藏
页码：1563 / 1566
页数：3
相关论文
共 50 条
  • [1] Electronic structure of Ga1-x Al x As nanostructures grown on the GaAs surface by ion implantation
    Donaev, S. B.
    Umirzakov, B. E.
    Tashmukhamedova, D. A.
    TECHNICAL PHYSICS, 2015, 60 (10) : 1563 - 1566
  • [2] Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga1−xAlxAs semiconductor superlattice
    V. N. Mughnetsyan
    A. A. Kirakosyan
    Journal of Contemporary Physics (Armenian Academy of Sciences), 2009, 44 : 140 - 144
  • [3] UNIFORMLY COMPOSITIONAL Ga1 - xAlxAs1 - yPy LAYER GROWN ON GaAs BY LIQUID PHASE EPITAXY.
    Lee, Yao-Ting
    1978, 4 : 27 - 28
  • [4] Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation
    Kh. Kh. Boltaev
    Zh. Sh. Sodikjanov
    D. A. Tashmukhamedova
    B. E. Umirzakov
    Technical Physics, 2017, 62 : 1882 - 1884
  • [5] INVESTIGATION OF INTRINSIC AND EXTRINSIC PHOTOLUMINESCENCE IN GaAs/Ga1 - xAlxAs MQW.
    Balkan, N.
    Ridley, B.K.
    Frost, J.
    Andrews, D.A.
    Goodridge, I.
    Roberts, J.
    1600, (02):
  • [6] GAAS/GA1-XALXAS AND GA1-XALXAS/GAAS HETEROINTERFACES GROWN BY MOLECULAR-BEAM EPITAXY
    ALEXANDRE, F
    LIEVIN, JL
    MEYNADIER, MH
    DELALANDE, C
    SURFACE SCIENCE, 1986, 168 (1-3) : 454 - 461
  • [7] First-principles study on the structural stability and electronic properties of GaAs/Ga1−xAlxAs superlattice nanowires
    Lei Liu
    Yu Diao
    Sihao Xia
    Journal of Nanoparticle Research, 2020, 22
  • [8] ELECTRONIC-STRUCTURE OF GAAS-GA1-XALXAS QUANTUM WIRES
    WONG, KB
    JAROS, M
    HAGON, JP
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1198 - 1203
  • [9] RAMAN SCATTERING FROM PERIODIC & QUASIPERIODIC GAAS/GA1 -XALXAS SUPERLATTICES.
    Lockwood, D.J.
    Moore, W.T.
    Devine, R.L.S.
    Indian Journal of Pure and Applied Physics, 1988, 26 (2-3): : 131 - 140
  • [10] INTERBAND MAGNETOOPTICAL EXPERIMENTS IN Ga1 - xAlxAs-GaAs QUANTUM WELLS.
    Maan, J.C.
    Fasolino, A.
    Belle, G.
    Altarelli, M.
    Ploog, K.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1984, 127 B-C (1-3): : 426 - 432
12345