Composition and Structure of Ga1 – xNaxAs Nanolayers Produced near the GaAs Surface by Na+ Implantation

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作者：
Kh. Kh. Boltaev
Zh. Sh. Sodikjanov
D. A. Tashmukhamedova
B. E. Umirzakov
机构：
[1] Tashkent State Technical University,
来源：
Technical Physics | 2017年 / 62卷
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摘要：
The composition and structure of nanodimensional Ga1 – xNaxAs phases produced by implantation of Na+ ions into the near-surface area of GaAs have been studied by Auger electron spectroscopy and fast electron diffraction. It has been found that the thickness of the ternary epitaxial layer is 10–12 nm for ion energy E0 = 20 keV. The composition of the three-layer nanosystems is GaAs–Ga0.5Na0.5As–GaAs.
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页码：1882 / 1884
页数：2
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