Electronic structure of Ga1–xAlxAs nanostructures grown on the GaAs surface by ion implantation

被引：0
|
作者：
S. B. Donaev
B. E. Umirzakov
D. A. Tashmukhamedova
机构：
[1] Tashkent State Technical University,
来源：
Technical Physics | 2015年 / 60卷
关键词：
GaAs; Molecular Beam Epitaxy; GaAs Surface; Nanocrystalline Phase; GaAs Film;
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摘要：
The surface morphology and electronic properties of nanocrystalline phases and 2–7-nm-thick Ga1-xAlxAs films grown on the GaAs(111) surface by Al+ ion implantation with subsequent (laser + thermal) annealing are studied. It is found that bandgap Eg of the Ga0.5Al0.5As nanocrystalline surface phase 25–30 nm in size equals 2.8–2.9 eV.
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页码：1563 / 1566
页数：3
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