High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

被引：0
|
作者：
Jiaqi Liu
Yuanfu Zhao
Liang Wang
Dan Wang
Hongchao Zheng
Maoxin Chen
Lei Shu
Tongde Li
Dongqiang Li
Wei Guo
机构：
[1] Beijing Microelectronics Technology Institute,School of Astronautics
[2] Harbin Institute of Technology,undefined
来源：
Science China Information Sciences | 2017年 / 60卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] A Commercial 65 nm CMOS Technology for Space Applications: Heavy Ion, Proton and Gamma Test Results and Modeling
    Roche, Philippe
    Gasiot, Gilles
    Uznanski, Slawosz
    Daveau, Jean-Marc
    Torras-Flaquer, Josep
    Clerc, Sylvain
    Harboe-Sorensen, Reno
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) : 2079 - 2088
  • [32] Study of single event transient induced by heavy-ion in NMOS transistor and CMOS inverter
    Gao, Cheng
    Zhang, Rui
    Huang, Jiaoying
    Fu, Chengcheng
    CONCURRENCY AND COMPUTATION-PRACTICE & EXPERIENCE, 2019, 31 (12):
  • [33] Compact Modeling and simulation of circuit reliability for 65-nm CMOS technology
    Wang, Wenping
    Reddy, Vijay
    Krishnan, Anand T.
    Vattikonda, Rakesh
    Krishnan, Srikanth
    Cao, Yu
    IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2007, 7 (04) : 509 - 517
  • [34] Design of Silicon Photonic Interconnect ICs in 65-nm CMOS Technology
    Bae, Woorham
    Jeong, Gyu-Seob
    Kim, Yoonsoo
    Chi, Han-Kyu
    Jeong, Deog-Kyoon
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2016, 24 (06) : 2234 - 2243
  • [35] Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter
    何安林
    郭刚
    史淑廷
    沈东军
    刘建成
    蔡莉
    范辉
    Journal of Semiconductors, 2015, 36 (11) : 122 - 126
  • [36] Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter
    何安林
    郭刚
    史淑廷
    沈东军
    刘建成
    蔡莉
    范辉
    Journal of Semiconductors, 2015, (11) : 122 - 126
  • [37] An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology
    Chen, Qingyu
    Wang, Haibin
    Chen, Li
    Li, Lixiang
    Zhao, Xing
    Liu, Rui
    Chen, Mo
    Li, Xuantian
    JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2016, 32 (03): : 385 - 391
  • [38] Experimental research of heavy ion and proton induced single event effects for a Bi-CMOS technology DC/DC converter
    He Anlin
    Guo Gang
    Shi Shuting
    Shen Dongjun
    Liu Jiancheng
    Cai Li
    Fan Hui
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (11)
  • [39] A 300-GHz Fundamental Oscillator in 65-nm CMOS Technology
    Razavi, Behzad
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2011, 46 (04) : 894 - 903
  • [40] An SEU-Resilient SRAM Bitcell in 65-nm CMOS Technology
    Qingyu Chen
    Haibin Wang
    Li Chen
    Lixiang Li
    Xing Zhao
    Rui Liu
    Mo Chen
    Xuantian Li
    Journal of Electronic Testing, 2016, 32 : 385 - 391
12345