High energy proton and heavy ion induced single event transient in 65-nm CMOS technology

被引：0
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作者：
Jiaqi Liu
Yuanfu Zhao
Liang Wang
Dan Wang
Hongchao Zheng
Maoxin Chen
Lei Shu
Tongde Li
Dongqiang Li
Wei Guo
机构：
[1] Beijing Microelectronics Technology Institute,School of Astronautics
[2] Harbin Institute of Technology,undefined
来源：
Science China Information Sciences | 2017年 / 60卷
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