Electromigration effects on intermetallic growth at wire-bond interfaces

被引:0
|
作者
H. T. Orchard
A. L. Greer
机构
[1] University of Cambridge,Department of Materials Science & Metallurgy
来源
关键词
Electromigration; intermetallic; wire bond; Au/Al;
D O I
暂无
中图分类号
学科分类号
摘要
At a bimetallic interface, excessive intermetallic growth can cause device failure. For each intermetallic phase, a direct current flowing normal to the interface can change its thickening rate, increasing the rate for current in one direction and decreasing it for the reverse direction. In this paper, we present electrical resistance measurements on single wire-bond/bond-pad interfaces under the influence of current. Resistance increases are correlated with the growth of intermetallics observed in cross section of the wire bonds, providing a sensitive probe of microstructural evolution. The form of resistance change is clearly altered under applied current and depends on polarity. The resistance changes demonstrate key aspects of the effects of electromigration on intermetallic growth, but a fully quantitative interpretation of the changes is hampered by the appearance of more than one intermetallic phase and by the development of voids.
引用
收藏
页码:1961 / 1968
页数:7
相关论文
共 50 条
  • [21] Dicing Tape Evaluation for Wire-Bond and Bumped Flip Chip Wafer Applications
    Pan, Shannon
    Li, Kent
    Dang, Shannon
    Chen, Xing Long
    Zhang, Yalong
    Liu, Kevin
    Kopp, Bill
    Haji-Rahim, Mohsen
    Warren, Waite
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2013 (CSTIC 2013), 2013, 52 (01): : 731 - 734
  • [22] Effects of electromigration on the growth of intermetallic compounds in Cu/SnBi/Cu solder joints
    X. Gu
    D. Yang
    Y.C. Chan
    B.Y. Wu
    Journal of Materials Research, 2008, 23 : 2591 - 2596
  • [23] Effects of electromigration on the growth of intermetallic compounds in Cu/SnBi/Cu solder joints
    Gu, X.
    Yang, D.
    Chan, Y. C.
    Wu, B. Y.
    JOURNAL OF MATERIALS RESEARCH, 2008, 23 (10) : 2591 - 2596
  • [24] On the use of OSL of wire-bond chip card modules for retrospective and accident dosimetry
    Woda, Clemens
    Spoettl, Thomas
    RADIATION MEASUREMENTS, 2009, 44 (5-6) : 548 - 553
  • [25] The 56xx Desktop Micro Factory - the New Equipment for Wire-Bond Technologies
    Sedlmair, J.
    Berger, S.
    ACTA PHYSICA POLONICA A, 2009, 116 : S196 - S197
  • [26] Wire-Bond Free Technique for Right-Angle Coplanar Waveguide Bend Structures
    Kirn, Hosaeng
    Franklin-Drayton, Rhonda
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (02) : 442 - 448
  • [27] Electromigration Enhanced Growth of Intermetallic Compound in Solder Bumps
    Ceric, H.
    Singulani, A. Pires
    de Orio, R. L.
    Selberherr, S.
    2013 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IRW), 2013, : 166 - 169
  • [28] Process integrated wire-bond quality control by means of cytokine-Formal Immune Networks
    Montealegre, Norma
    Hagenkoetter, Sebastian
    JOURNAL OF INTELLIGENT MANUFACTURING, 2012, 23 (03) : 699 - 715
  • [29] Crosstalk and Switching Noise Mechanism Study in High Density Wire-bond FPGA Device
    Tan, Siow Chek
    Yew, Yee Huan
    Shi, Hong
    EPTC: 2008 10TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS 1-3, 2008, : 78 - +
  • [30] Wire-bond failure mechanisms in plastic encapsulated microcircuits and ceramic hybrids at high temperatures
    Oldervoll, F
    Strisland, F
    MICROELECTRONICS RELIABILITY, 2004, 44 (06) : 1009 - 1015