Volatile Heteroligand Complexes of Copper(II): New Precursors for Chemical Vapor Deposition of Copper Films

Two heteroligand ketoiminate–diketonate complexes of copper(II), CuL(hfa) (1), L = pentane-2-imino-4-onato, CH3COCHCNHCH3–, and CuL′(hfa) (2), L′ = 2,2,6,6-tetramethyl-3-iminoheptane-5-onato, C(CH3)3COCHCNHC(CH)–, were studied as precursors for chemical vapor deposition of copper films. The flow method was employed to measure the temperature dependences of a saturated vapor pressure of these compounds, the thermodynamic parameters of evaporation–sublimation were calculated, and the volatilities of these compounds and thermal behaviors in the condensed and gaseous phases were compared. The copper films were compared, and it was shown that comparatively high growth rates are reached when (2) is used to obtain copper films in hydrogen.