Volatile Heteroligand Complexes of Copper(II): New Precursors for Chemical Vapor Deposition of Copper Films

被引：0
|
作者：
B. V. Krisyuk
A. E. Turgambaeva
P. A. Stabnikov
I. K. Igumenov
S. V. Sysoev
Yu. M. Rumyantsev
S. A. Prokhorova
E. A. Maksimovskii
O. V. Maslova
机构：
[1] Russian Academy of Sciences (IIC SB RAS),Nikolaev Institute of Inorganic Chemistry, Siberian Branch
来源：
Russian Journal of Applied Chemistry | 2018年 / 91卷
关键词：
volatile copper(II) complexes; copper films; MOCVD precursors; heteroligand complexes; vapor pressure; thermal properties;
D O I：
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摘要：
Two heteroligand ketoiminate–diketonate complexes of copper(II), CuL(hfa) (1), L = pentane-2-imino-4-onato, CH3COCHCNHCH3–, and CuL′(hfa) (2), L′ = 2,2,6,6-tetramethyl-3-iminoheptane-5-onato, C(CH3)3COCHCNHC(CH)–, were studied as precursors for chemical vapor deposition of copper films. The flow method was employed to measure the temperature dependences of a saturated vapor pressure of these compounds, the thermodynamic parameters of evaporation–sublimation were calculated, and the volatilities of these compounds and thermal behaviors in the condensed and gaseous phases were compared. The copper films were compared, and it was shown that comparatively high growth rates are reached when (2) is used to obtain copper films in hydrogen.
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页码：1068 / 1075
页数：7
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