Intermittent-contact scanning capacitance microscope for lithographic overlay measurement

被引:17
|
作者
Kopanski, JJ [1 ]
Mayo, S [1 ]
机构
[1] Natl Inst Stand & Technol, Div Semicond Elect, Gaithersburg, MD 20899 USA
关键词
D O I
10.1063/1.121397
中图分类号
O59 [应用物理学];
学科分类号
摘要
A scanning-capacitance-microscope (SCM) mode was implemented by using an atomic force microscope (AFM) operated in intermittent contact and by measuring the tip-to-sample capacitance change at the tip vibration frequency. The intermittent-contact-mode SCM was able to image and determine the overlay separation of metal lines buried under a 1-mu m-thick, planarized dielectric layer. Modeling of the intermittent-contact SCM signal across buried metal lines was consistent with the experimental results. This hybrid intermittent-contact AFM and SCM has the potential to measure the lithographic overlay between metal lines located at consecutive levels beneath dielectric layers in an integrated circuit. [S0003-6951(98)04119-9].
引用
收藏
页码:2469 / 2471
页数:3
相关论文
共 50 条
  • [41] Scanning capacitance microscope as a tool for the characterization of integrated circuits
    Born, A
    Wiesendanger, R
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S421 - S426
  • [42] Factors influencing the capacitance-voltage characteristics measured by the scanning capacitance microscope
    Buh, GH
    Kopanski, JJ
    Marchiando, JF
    Birdwell, AG
    Kuk, Y
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2680 - 2685
  • [43] Modeling viscoelasticity through spring-dashpot models in intermittent-contact atomic force microscopy
    Lopez-Guerra, Enrique A.
    Solares, Santiago D.
    BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 2014, 5 : 2149 - 2163
  • [44] A Scanning Electrostatic Force Microscope for the Measurement of Material Distribution in Non-contact Condition
    Ito, So
    Hosobuchi, Keiichiro
    Jia, Zhigang
    Gao, Wei
    PROCEEDINGS OF THE 38TH INTERNATIONAL MATADOR CONFERENCE, 2022, : 563 - 571
  • [45] Scanning capacitance microscope, an alternative technique to the C-V measurement for the SiO2 characterisation
    Bordoni, F
    Fasciani, L
    DeTommasis, R
    DiGiacomo, A
    Moccia, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1997, 216 : 180 - 184
  • [46] Scanning capacitance microscope, an alternative technique to the C-V measurement for the SiO2 characterization
    Universita degli Studi di l'Aquila, L'Aquila, Italy
    Journal of Non-Crystalline Solids, 1997, 216 : 180 - 184
  • [47] Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes
    Hotta, Shoji
    Sutani, Takumichi
    Halle, Scott
    Moore, Daniel
    Archie, Chas
    Sugiyama, Akiyuki
    Ikeno, Masahiko
    Yamaguchi, Atsuko
    Torii, Kazuyoshi
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2011, 10 (02):
  • [48] Review of scanning electron microscope-based overlay measurement beyond 3-nm node device
    Inoue, Osamu
    Hasumi, Kazuhisa
    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2019, 18 (02):
  • [49] Measuring average tip-sample forces in intermittent-contact (tapping) force microscopy in air
    Fain, SC
    Barry, KA
    Bush, MG
    Pittenger, B
    Louie, RN
    APPLIED PHYSICS LETTERS, 2000, 76 (07) : 930 - 932
  • [50] SUBMICROMETER LITHOGRAPHIC PATTERNING OF THIN GOLD-FILMS WITH A SCANNING TUNNELING MICROSCOPE
    STOCKMAN, L
    NEUTTIENS, G
    VANHAESENDONCK, C
    BRUYNSERAEDE, Y
    APPLIED PHYSICS LETTERS, 1993, 62 (23) : 2935 - 2937