Scanning capacitance microscope as a tool for the characterization of integrated circuits

被引：17

作者：

Born, A

Wiesendanger, R

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Microstruct Res Ctr, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / Suppl 1期

关键词：

D O I：

10.1007/s003390051175

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

With the decreasing size of integrated circuits (ICs), there is an increasing demand for the measurement of doping profiles with high spatial resolution. The scanning capacitance microscope (SCM) offers the possibility of measuring 2D dopant profiles with spatial resolution of less than 20 nm. A great problem of the SCM technique is the influence of previous measurements on subsequent ones. We have observed hysteresis in the SCM images and measured low-frequency C-V curves with high-frequency equipment. A theoretical model was developed to understand this phenomenon. We are now undertaking the first steps using the SCM as a standard device for the characterization of ICs.

引用

页码：S421 / S426

页数：6

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