Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

被引:51
|
作者
Bothe, K. [1 ]
Ramspeck, K. [1 ]
Hinken, D. [1 ]
Schinke, C. [1 ]
Schmidt, J. [1 ]
Herlufsen, S. [1 ]
Brendel, R. [1 ]
Bauer, J. [2 ]
Wagner, J. -M. [2 ]
Zakharov, N. [2 ]
Breitenstein, O. [2 ]
机构
[1] ISFH, D-31860 Emmerthal, Germany
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
P-N-JUNCTIONS; VISIBLE LIGHT EMISSION; AVALANCHE BREAKDOWN; SCANNING PHOTOLUMINESCENCE; MICROPLASMA PHENOMENA; ELECTRICAL BREAKDOWN; PHOTON GENERATION; METAL IMPURITIES; ROOM-TEMPERATURE; HOT-SPOTS;
D O I
10.1063/1.3256199
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the emission of light from industrial multicrystalline silicon solar cells under forward and reverse biases. Camera-based luminescence imaging techniques and dark lock-in thermography are used to gain information about the spatial distribution and the energy dissipation at pre-breakdown sites frequently found in multicrystalline silicon solar cells. The pre-breakdown occurs at specific sites and is associated with an increase in temperature and the emission of visible light under reverse bias. Moreover, additional light emission is found in some regions in the subband-gap range between 1400 and 1700 nm under forward bias. Investigations of multicrystalline silicon solar cells with different interstitial oxygen concentrations and with an electron microscopic analysis suggest that the local light emission in these areas is directly related to clusters of oxygen. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3256199]
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Texturization of cast multicrystalline silicon for solar cells
    Xi, ZQ
    Yang, DR
    Dan, W
    Jun, C
    Li, XH
    Que, DL
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 485 - 489
  • [42] Hydrogen passivation of multicrystalline silicon solar cells
    Lüdemann, R
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2): : 86 - 90
  • [43] The low cost multicrystalline silicon solar cells
    Burtescu, S.
    Parvulescu, C.
    Babarada, F.
    Manea, E.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2009, 165 (03): : 190 - 193
  • [44] Noise of Reverse Biased Solar Cells
    Skarvada, P.
    Macku, R.
    Koktavy, P.
    Raska, M.
    NOISE AND FLUCTUATIONS, 2009, 1129 : 391 - 394
  • [45] Influence of copper contamination on the illuminated forward and dark reverse current-voltage characteristics of multicrystalline p-type silicon solar cells
    Turmagambetov, Tleuzhan
    Dubois, Sebastien
    Garandet, Jean-Paul
    Martel, Benoit
    Enjalbert, Nicolas
    Veirman, Jordi
    Pihan, Etienne
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 11-12, 2014, 11 (11-12): : 1697 - 1702
  • [46] REVERSE-BIASED SILICON P-N-JUNCTION CURRENT AT HIGH BIAS VOLTAGES
    DELIMOVA, LA
    GREKHOV, IV
    LEVINSTEIN, ME
    VOLLE, VM
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 25 (01): : K21 - K25
  • [47] CHARGE INJECTION INTO SIO2 FROM REVERSE-BIASED JUNCTIONS
    BOSSELAA.CA
    SOLID-STATE ELECTRONICS, 1973, 16 (05) : 648 - 651
  • [48] Effects of solar cell processing steps on dislocation luminescence in multicrystalline silicon
    Nguyen, Hieu T.
    Rougieux, Fiacre E.
    Wang, Fan
    Macdonald, Daniel
    5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015, 2015, 77 : 619 - 625
  • [49] Dry PSG etching for multicrystalline silicon solar cells
    Nositschka, WA
    Kenanoglu, A
    Voigt, O
    Borchert, D
    Kurz, H
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1348 - 1351
  • [50] Efficient thin epilayer multicrystalline silicon solar cells
    Ballhorn, G
    Weber, KJ
    Armand, S
    Stuckings, MF
    Stocks, M
    Blakers, AW
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 24 - 28