Luminescence emission from forward- and reverse-biased multicrystalline silicon solar cells

被引:51
|
作者
Bothe, K. [1 ]
Ramspeck, K. [1 ]
Hinken, D. [1 ]
Schinke, C. [1 ]
Schmidt, J. [1 ]
Herlufsen, S. [1 ]
Brendel, R. [1 ]
Bauer, J. [2 ]
Wagner, J. -M. [2 ]
Zakharov, N. [2 ]
Breitenstein, O. [2 ]
机构
[1] ISFH, D-31860 Emmerthal, Germany
[2] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
关键词
P-N-JUNCTIONS; VISIBLE LIGHT EMISSION; AVALANCHE BREAKDOWN; SCANNING PHOTOLUMINESCENCE; MICROPLASMA PHENOMENA; ELECTRICAL BREAKDOWN; PHOTON GENERATION; METAL IMPURITIES; ROOM-TEMPERATURE; HOT-SPOTS;
D O I
10.1063/1.3256199
中图分类号
O59 [应用物理学];
学科分类号
摘要
We study the emission of light from industrial multicrystalline silicon solar cells under forward and reverse biases. Camera-based luminescence imaging techniques and dark lock-in thermography are used to gain information about the spatial distribution and the energy dissipation at pre-breakdown sites frequently found in multicrystalline silicon solar cells. The pre-breakdown occurs at specific sites and is associated with an increase in temperature and the emission of visible light under reverse bias. Moreover, additional light emission is found in some regions in the subband-gap range between 1400 and 1700 nm under forward bias. Investigations of multicrystalline silicon solar cells with different interstitial oxygen concentrations and with an electron microscopic analysis suggest that the local light emission in these areas is directly related to clusters of oxygen. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3256199]
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页数:8
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