Surface morphologies of III-V based magnetic semiconductor (Ga,Mn) As grown by molecular beam epitaxy

被引：2
|
作者：
Yang, JR [1 ]
Yasuda, H [1 ]
Wang, SL [1 ]
Matsukura, F [1 ]
Ohno, Y [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Lab Elect Intelligent Syst, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期
基金：
日本学术振兴会;
关键词：
(Ga; Mn)As; molecular beam epitaxy; segregation; surface morphology; atomic force microscopy;
D O I：
10.1016/S0169-4332(00)00429-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of Mn flux intensity and growth temperature on surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As layers grown by low temperature (LT) molecular beam epitaxy (MBE) on (001) GaAs is studied by atomic force microscopy (AFM). The results show that homogeneous (Ga,Mn)As grows two-dimensionally (2D), whereas 3D growth takes place when hexagonal second phase appears on the growth front. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：242 / 246
页数：5
相关论文
共 50 条
  • [41] (Ga,Mn)As/GaAs diluted magnetic semiconductor superlattice structures prepared by molecular beam epitaxy
    Shen, AD
    Ohno, H
    Matsukura, F
    Sugawara, Y
    Ohno, Y
    Akiba, N
    Kuroiwa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2A): : L73 - L75
  • [42] (Ga, Mn)As/GaAs diluted magnetic semiconductor superlattice structures prepared by molecular beam epitaxy
    Tohoku Univ, Sendai, Japan
    Jpn J Appl Phys Part 2 Letter, 2 A (L73-L75):
  • [43] Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
    Rushforth, A.W.
    Wang, M.
    Farley, N.R.S.
    Campion, R.P.
    Edmonds, K.W.
    Staddon, C.R.
    Foxon, C.T.
    Gallagher, B.L.
    Journal of Applied Physics, 2008, 104 (07):
  • [44] Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis
    Rushforth, A. W.
    Wang, M.
    Farley, N. R. S.
    Campion, R. P.
    Edmonds, K. W.
    Staddon, C. R.
    Foxon, C. T.
    Gallagher, B. L.
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)
  • [45] GaFeAs: a diluted magnetic semiconductor grown by molecular beam epitaxy
    Hirose, S
    Yamaura, M
    Haneda, S
    Hara, K
    Munekata, H
    THIN SOLID FILMS, 2000, 371 (1-2) : 272 - 277
  • [46] Growth modes of hexagonal and cubic semiconductor III-V nitrides in RF-Molecular Beam Epitaxy
    Daudin, B
    Widmann, F
    Feuillet, G
    Samson, Y
    Rouvière, JL
    Pelekanos, N
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 64 - 65
  • [47] Integration of carbon nanotubes with semiconductor technology:: fabrication of hybrid devices by III-V molecular beam epitaxy
    Stobbe, S.
    Lindelof, P. E.
    Nygard, J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (11) : S10 - S16
  • [48] Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy
    Bouravleuv, Alexei
    Cirlin, George
    Sapega, Victor
    Werner, Peter
    Savin, Alexander
    Lipsanen, Harri
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (14)
  • [49] Effect of optical spin injection on ferromagnetically coupled Mn spins in the III-V magnetic alloy semiconductor (Ga, Mn)As
    Oiwa, A
    Mitsumori, Y
    Moriya, R
    Slupinski, T
    Munekata, H
    PHYSICAL REVIEW LETTERS, 2002, 88 (13) : 4
  • [50] Elaboration of III-V nitrides quantum dots in molecular beam epitaxy
    Daudin, B
    Widmann, F
    Feuillet, G
    Samson, Y
    Rouviere, JL
    Pelekanos, N
    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1177 - 1180
12345