Surface morphologies of III-V based magnetic semiconductor (Ga,Mn) As grown by molecular beam epitaxy

被引：2
|
作者：
Yang, JR [1 ]
Yasuda, H [1 ]
Wang, SL [1 ]
Matsukura, F [1 ]
Ohno, Y [1 ]
Ohno, H [1 ]
机构：
[1] Tohoku Univ, Lab Elect Intelligent Syst, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan
来源：
APPLIED SURFACE SCIENCE | 2000年 / 166卷 / 1-4期
基金：
日本学术振兴会;
关键词：
(Ga; Mn)As; molecular beam epitaxy; segregation; surface morphology; atomic force microscopy;
D O I：
10.1016/S0169-4332(00)00429-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of Mn flux intensity and growth temperature on surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As layers grown by low temperature (LT) molecular beam epitaxy (MBE) on (001) GaAs is studied by atomic force microscopy (AFM). The results show that homogeneous (Ga,Mn)As grows two-dimensionally (2D), whereas 3D growth takes place when hexagonal second phase appears on the growth front. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：242 / 246
页数：5
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